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| SMD Type Transistors NPN Epitaxial Planar Silicon Transistor 2SD1621 Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. Very small size making it easy to provide highdensity, small-sized hybrid IC' s. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Junction temperature Storage temperature * Mounted on ceramic board(250mm2X0.8mm) Symbol VCBO VCEO VEBO IC ICP PC PC * Tj Tstg Rating 30 25 6 2 5 500 1.3 150 -55 to +150 Unit V V V A A mW W www.kexin.com.cn 1 SMD Type 2SD1621 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Turn-on timie Symbol ICBO IEBO hFE fT Cob Testconditons VCB = 20 V, IE=0 VEB = 4 V, IC=0 VCE = 2 V , IC = 100 mA VCE = 10 V , IC = 50 mA VCB = 10 V , f = 1.0MHz Transistors Min Typ Max 0.1 0.1 Unit iA iA 100 150 19 0.18 0.85 30 25 6 60 560 MHz pF 0.4 1.2 V V V V V ns VCE(sat) IC = 1.5 A , IB = 75 mA VBE(sat) IC = 1.5 A , IB = 75 mA V(BR)CBO IC = 10iA , IE = 0 V(BR)CEO IC = 1mA , RBE = V(BR)EBO IE = 10iA , IC = 0 ton Storage time tstg 500 ns Turn-off time tf 25 ns hFE Classification Marking Rank hFE R 100 200 S 140 280 DD T 200 400 U 280 560 2 www.kexin.com.cn |
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